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Crucial DDR4 3200 MHz 32GB ( 2x 16GB ) BL16G32C16U4W.M16FE1
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ToriDiili
80 €
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Tyyppi: RAM-muistit
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Kapasiteetti: 2x 16 GB
Nopeus: 2666 MHz (vakio JEDEC), 3200 MHz (XMP-profiili käytössä)
CAS-latenssi: 16 (XMP-tilassa)
Rank: Dual-rank (2 rankia)
DRAM-valmistaja: Micron Technology
Lisätietoja:
Manufacturing Description
Module Manufacturer: Crucial Technology
Module Part Number: BL16G32C16U4W.M16FE1
Module Series: Ballistix White
DRAM Manufacturer: Micron Technology
DRAM Components: C9BJZ (CT40A1G8SA-062M:E)
Component Design ID: Z11B
DRAM Die Revision / Process Node: E / 19 nm
Module Manufacturing Date: Week 04, 2020
Manufacturing Date Decoded: January 20-24, 2020
Module Manufacturing Location: China
Module Serial Number: E42ACD02h
Manufacturing Identification Number (Lot Number): 420823073
Module PCB Revision: 00h
Physical & Logical Attributes
Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2666V
Base Module Type: UDIMM (133,35 mm)
Module Capacity: 16 GB
Reference Raw Card: B1 (8 layers)
JEDEC Raw Card Designer: Micron Technology
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 2
Address Mapping from Edge Connector to DRAM: Mirrored
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 8 Gb
Calculated DRAM Density: 8 Gb
Number of DRAM components: 16
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Not supported
Soft Post Package Repair: Not supported
DRAM Timing Parameters
Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 10T, 12T, 13T, 14T,
15T, 16T, 17T, 18T,
19T, 20T
Minimum Clock Cycle Time (tCK min): 0,750 ns (1333,33 MHz)
Maximum Clock Cycle Time (tCK max): 1,600 ns (625,00 MHz)
CAS# Latency Time (tAA min): 14,250 ns
RAS# to CAS# Delay Time (tRCD min): 14,250 ns
Row Precharge Delay Time (tRP min): 14,250 ns
Active to Precharge Delay Time (tRAS min): 32,000 ns
Act to Act/Refresh Delay Time (tRC min): 46,250 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 2,925 ns
Long Row Active to Row Active Delay (tRRD_L min): 4,900 ns
Write Recovery Time (tWR min): 15,000 ns
Short Write to Read Command Delay (tWTR_S min): 2,500 ns
Long Write to Read Command Delay (tWTR_L min): 7,500 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,000 ns
Four Active Windows Delay (tFAW min): 21,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes
Supply Voltage (VDD), Min / Typical / Max: 1,16V / 1,20V / 1,26V
Activation Supply Voltage (VPP), Min / Typical / Max: 2,41V / 2,50V / 2,75V
Termination Voltage (VTT), Min / Typical / Max: 0,565V / 0,605V / 0,640V
Thermal Parameters
Module Thermal Sensor: Not Incorporated
SPD Protocol
SPD Revision: 1.1
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 2442h (OK)
SPD Checksum (Bytes 80h-FDh): DF74h (OK)
Part number details
JEDEC DIMM Label: 16GB 2Rx8 PC4-2666V-UB1-11
Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW
1333 MHz 20 19 19 43 62 4 7 20 4 10 28
1333 MHz 19 19 19 43 62 4 7 20 4 10 28
1200 MHz 18 18 18 39 56 4 6 18 3 9 26
1067 MHz 17 16 16 35 50 4 6 16 3 8 23
1067 MHz 16 16 16 35 50 4 6 16 3 8 23
933 MHz 15 14 14 30 44 3 5 14 3 7 20
933 MHz 14 14 14 30 44 3 5 14 3 7 20
800 MHz 13 12 12 26 37 3 4 12 2 6 17
800 MHz 12 12 12 26 37 3 4 12 2 6 17
667 MHz 10 10 10 22 31 2 4 10 2 5 14
Intel Extreme Memory Profiles
Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR4-3200 N/A
DRAM Clock Frequency: 1600 MHz N/A
Module VDD Voltage Level: 1,35 V N/A
Minimum DRAM Cycle Time (tCK): 0,625 ns N/A
CAS Latencies Supported: 20T,19T,18T,17T,
16T,15T,14T,13T,
12T,11T,10T,9T,
8T,7T N/A
CAS Latency Time (tAA): 10,000 ns N/A
RAS# to CAS# Delay Time (tRCD): 11,250 ns N/A
Row Precharge Delay Time (tRP): 11,250 ns N/A
Active to Precharge Delay Time (tRAS): 22,500 ns N/A
Active to Active/Refresh Delay Time (tRC): 45,000 ns N/A
Four Activate Window Delay Time (tFAW): 21,000 ns N/A
Short Activate to Activate Delay Time (tRRD_S): 3,000 ns N/A
Long Activate to Activate Delay Time (tRRD_L): 4,900 ns N/A
Normal Refresh Recovery Delay Time (tRFC1): 350,000 ns N/A
2x mode Refresh Recovery Delay Time (tRFC2): 260,000 ns N/A
4x mode Refresh Recovery Delay Time (tRFC4): 160,000 ns N/A
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